Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime.

Spieler André Heinzig Stammdaten; Name: André Heinzig Verein: Dresdner SSV e.V. DVV-Nr. Rangliste

dismiss all constraints. view refined list in 34 Ergebnisse zu Andre Heinzig: Dresden, Jens Trommer, Silicon, Freiberg, Greiz, kostenlose Person-Info bei Personsuche Yasni.de André Heinzig, Thomas Mikolajick, Jens Trommer, Daniel Grimm, and Walter M. Weber. Dually Active Silicon Nanowire Transistors and Circuits with Equal Electron and Hole Transport. Nano Letters 2013, 13 (9) , 4176-4181. Moved Permanently. The document has moved here. Sehen Sie sich das Profil von Andree Heinzig im größten Business-Netzwerk der Welt an.

Thereby, the mandatory requirement to yield energy efficient circuits with a single type of transistor is shown for the first time. Christian Römer, Ghader Darbandy, Mike Schwarz, Jens Trommer, André Heinzig, Thomas Mikolajick, Walter Weber, Benjamín Iñíguez and Alexander Kloes: Uniform DC Compact Model for Schottky Barrier and Reconfigurable Field-Effect Transistors: 11:45: Martin Vanbrabant, Lucas Nyssens, Valeriya Kilchytska and Jean-Pierre Raskin Name / Info: Mario Heinzig, Heinzig, Maik Heinzig, Peter Heinzig, Rico Heinzig, Andree Heinzig, Andre Heinzig, Joachim Heinzig, Philine Heinzig MATZKE & HEINZIG :: News Eine Menge neuer Aufgaben, die auf die Teams an Oker und Elbe zukommen. Skip navigation. Contacts; Downloads; Impressum; Privacy .

Ref.: André Heinzig et al., Reconfigurable Silicon Nanowire Transistors, Nano Letters, 2011 [DOI: 10.1021/nl203094h ] Share 2 Like Leave Comment We welcome ideas for articles, blogs, and news. E-mail us NEWS TIPS? Feeds Newsletter Books Multimedia Events Forums Press About Home News Blog Essays Contributors Kurzweil Collection Log In Create

Strain-Engineering for Improved Tunneling in Reconfigurable Silicon Nanowire Transistors. Sayanti Banerjee, Uwe Muehle, Markus Löffler, Andre Heinzig, Jens Trommer, and Ehrenfried Zschech (2015). Preparation and characterization of silicon nanowires using SEM/FIB and TEM. International Journal of Materials Research: Vol. 106, No. 7, pp.

André Heinzig. NaMLab, TU Dresden. Verified email at namlab.com. Nanoelectronics. Articles Cited by. Title. Sort. Sort by citations Sort by year Sort by title.

Andreas. Andreasen. Andreason. Andreassen Heinzig. Heinzle. Heinzman. Heinzmann.

Den næste del af Heinzig Metalltechnik GmbH Auf der Welle 1-3 32369 Rahden DE 740. MANITZ Ogden,Utah (UT). 8015184512, Andre Contopoulos - Skyline Dr , Ogden,Utah (UT) 8015186441, Mari Heinzig - 15th St NE , Ogden,Utah (UT). 8015187508 André Heinzig Walter M. Weber In this work, we investigate the temperature dependence of electrical switching properties of back-gated, undoped Si-nanowire field-effect transistors with Ni André Heinzig received the Dipl.-Ing. and Ph.D. degrees in electrical engineering from Technische Universitat Dresden, Germany, in 2008 and 2014, respectively. From 2008 to 2011, he worked on the fabrication and characterization of nanowire devices with the Namlab gGmbH, Dresden.
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Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. We present novel multifunctional nanocircuits built from nanowire transistors that uniquely feature equal electron and hole conduction.
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In-Situ Investigations of Individual Nanowires within a FIB/SEM System - Volume 20 Issue S3

André HEINZIG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO). Andre Heinzig is on Facebook.

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André HEINZIG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

DOI: 10.1088/1361-6641/AA5581 Corpus ID: 99583180. The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems @article{Mikolajick2017TheRR, title={The RFET—a reconfigurable nanowire transistor and its application to novel electronic circuits and systems}, author={T. Mikolajick and Andre Heinzig and J. Trommer and T. Baldauf and W. Weber to a depletion or accumulation zone close to the interface [8]. To in-vestigate these eﬀects we used doped VLS-grown nanowires as test vehicles and characterized them individually. Abstract.